USCi Schottky Barrier Diode (SBD)

USCi Schottky Barrier Diode (SBD) have the following performance characteristics:

• Virtually zero diode switching losses, significantly lower than Si or GaN
• Unaffected from junction temperature, improves stability
• Significantly reduce active switch turn-on losses
• Simplification and cost reduction of cooling requirements which also improves system reliability
• Capable of running at higher switching speeds which reduces BOM count and costs