Research and Publications

2011:
Xueqing Li, Petre Alexandrov, Leonid Fursin, Christopher Dries, and Jian H. Zhao, "SiC Solid-State Disconnect for High Power System Applications", ICSCRM 2011, Cleveland, Ohio, USA, September 11-16, 2011.

Petre Alexandrov, Jianhui Zhang, Leonid Fursin, Xueqing Li, Christopher Dries, Lei Lin, Jian H. Zhao, Terence Burke, Fritz Kubd, "Development of Silicon Carbide High-Voltage Switches for Power Converters and Solid-State Disconnects," GOMACTech – 11, Government Microcircuit Applications and Critical Technology Conference, Orlando, FL, USA, March 21-24, 2011, pp. 167-170.

Petre Alexandrov, Xueqing Li, Leonid Fursin, Christopher Dries, Jian H. Zhao,Terence Burke, "Solid-state disconnects based on SiC power JFETs," Vehicle Power and Propulsion Conference (VPPC), 2011 IEEE,   6-9 September 2011 Chicago, IL.

2009:
4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile

2008:
Demonstration of the first SiC power integrated circuit
Development of High Temperature Lateral HV and LV JFETs in 4HSiC
Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors

2007:
1000-V 9.1-mΩ• cm² Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications

2006:
4.3 kV 4H-SiC merged PiN/Schottky diodes

2004:
4H-SiC UV Photo Detectors With Large Area and Very High Specific Detectivity
The First 4H-SiC BJT-Based 20 kHz, 7HP PWM DC-to-AC Inverter for Induction Motor Control Applications

2003:
Demonstration of first 10 kV, 130mXcm2 normally-off 4H-SiC trenched-and implanted vertical junction field-effect transistor
4H-SiC normally-off vertical junction field-effect transistor with high current density
1710-V 2.77-mcm2 4H-SiC Trenched and Implanted Vertical Junction Field-Effect Transistors
Demonstration of a high performance 4H-SiC vertical junction field effect transistor without epitaxial regrowth

2002:
All-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 A

2001:
Multistep junction termination extension for SiC power devices