Careers

Epitaxial Growth Engineer

USCi is currently expanding into SiC epitaxy, and is actively recruiting a Scientist / Engineer to help specify, install, and run our multi-wafer epitaxial reactor. The reactor will be utilized for process and epitaxial wafer recipe research and development. Successful high volume designs will be transferred to our commercial epitaxial wafer partners.

Responsibilities:

He or She will:

• Work with our reactor vender to install and qualify the tool in our Monmouth Junction, NJ location
• Work with our design team in the development and growth of both standard and novel SiC epitaxial wafer structures, with an emphasis on high voltage >= 1.7kV devices. Devices to be grown include Schottky Diodes, JFETs, BJTs, MOSFETs, and Thyristors
• Implement process work instructions for production processes
• Provide and implement schedules for both routine and preventive maintenance of the tool
• Implement an appropriate analytical tool laboratory to achieve success in our wafer growth activity
• Be responsible for reactor and analytical laboratory safety

Requirements

• Master's or Ph.D. level candidate desired, however Bachelor's level will be considered with extensive epitaxial growth experience.
• 3+ years of relevant experience is required.
• A combination of Research and Production oriented experience is desired.
• Extensive knowledge of vacuum systems, gas handling, and related safety systems is required.
• Good written and verbal communications skills.
• Ability to independently work in an ever-changing environment and manage multiple tasks.
• Ability to work with all levels of employees.