USCi

Recent News

January 19, 2012

USCi to develop next generation SiC devices with AIXTRON SiC Planetary Reactor technology

January 2, 2012

USCi awarded contract from NASA to develop Monolithic Silicon Carbide Active Pixel Sensors Array for Solar Blind UV Detection

August 24, 2011

USCi wins $750,000 Army Contract to Develop Gate Drivers for Silicon Carbide Power Transistors

August 23, 2011

USCi is awarded United States Patent for Solid State Disconnect Device

July 11, 2011

USCi is awarded a $1,000,000 Grant from the US Department of Energy

September 27, 2010

USCi wins $700,000 Contract from the Missile Defense Agency to develop Silicon Carbide DC-DC Converters

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Welcome to USCi

United Silicon Carbide, Inc. is devoted to the development of SiC power devices, offering the highest quality, state of the art products and customer service to our partners. Our innovations enable higher efficiency energy transmission, power supplies, and motor controls to a world that needs them now . . . more than ever.

  • United Silicon Carbide, inc. is a semiconductor company specializing in the development of high efficiency Silicon Carbide (SiC) devices including Schottky Barrier Diodes, JFETs, Bipolar Junction Transistors, Solid State Circuit Breakers, Power Modules, Custom IC's and Foundry Services.
  • Founded in 1998 and acquired by DOLCE Technologies in 2009, USCi develops and commercializes new SiC transistor technologies, processes, and applications.
  • USCi has been devoted to Silicon Carbide device development for over a decade, providing our customers access to state of the art SiC transistor technologies. Our partners in the Automobile, Power Supply, PV Inverter, and High Temperature Application spaces trust USCi for their next generation, high efficiency power conversion designs.