xR SiC Series Schottky Diodes xJ SiC Series JFETs

Welcome to USCi

United Silicon Carbide, Inc. is devoted to the development of SiC power devices, offering the highest quality, state of the art products and customer service to our partners. Our innovations enable higher efficiency energy transmission, power supplies, traction and motor controls to a world that needs them now . . . more than ever.

  • United Silicon Carbide, inc. is a semiconductor company pioneering the development of high efficiency Silicon Carbide (SiC) devices including Schottky Barrier Diodes, JFETs, MOSFETs, Bipolar Junction Transistors, application specific products, SiC IC's and Foundry Services.
  • Founded in 1998 and acquired by DOLCE Technologies in 2009, USCi develops and commercializes new SiC transistor technologies and processes from concept to mass production.
  • USCi has been devoted to Silicon Carbide device development for over a decade, providing our customers access to state of the art SiC transistor technologies. Our partners in the Automobile, Motor and Motion, Power Supply, PV Inverter, and High Temperature Application spaces trust USCi for their next generation, high efficiency power conversion designs.